Influence of buffer layers on the anisotropic magnetoresistance of NiCo films
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摘要: 用磁控濺射法制備了以NiFeCr和Ta分別為緩沖層的兩種NiCo薄膜樣品,在不同溫度下對兩種樣品退火.結果表明:在NiCo厚度相同的情況下,以NiFeCr作為緩沖層的樣品的各向異性磁致電阻(AMR)值明顯高于Ta作為緩沖層的樣品.X射線衍射(XRD)的結果表明,NiFeCr/NiCo薄膜的晶粒平均尺寸大于Ta/NiCo薄膜,且兩種樣品的磁膜/緩沖層界面存在較大差異,這可能是造成兩者AMR差異的原因.此外,對樣品進行溫度適當的熱處理可以明顯改善薄膜的物理性質.Abstract: NiCo films were deposited on NiFeCr and Ta buffer layers by using a DC magnetron sputtering system on Si substrates respectively. After deposition the samples were annealed at different temperatures. The structural and magnetic properties were systematically studied. It is shown that the value of anisotropic magnetoresistance (AMR) of the film with a NiFeCr buffer layer is higher than that of the film with a Ta buffer layer. XRD results indicate that the average grain size of the sample with a NiFeCr buffer layer is larger than that of the sample with a Ta buffer layer, and the situation of the NiCo/NiFeCr interface is different from that of NiCo/Ta. These would be responsible for the difference in AMR between the two kinds of films. A suitable anneal treatment is good for the films.
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Key words:
- magnetic thin film /
- buffer layer /
- anisotropic magnetoresistance /
- texture /
- grain size
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